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IRFU320 Datasheet PDF - Samsung
| Manufacturer: | Samsung |
| Description: | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 |
| Documentation: | IRFU320 Datasheet (4 Pages)Package Outline Dimension on1 Page Part Numbering System on3 Page |
| Pictures: |
IRFU320 Datasheet PDF (4 Pages)
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