| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 100 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Rise Time | 27.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 42 ns |
| Input Power (Max) | 100 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 100 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4BC30FD-SPBF is an Insulated Gate Bipolar Transistor with hyper-fast diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
● Optimized for specific application conditions
● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Infineon
11 Pages / 1.18 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.12 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
Infineon
Trans IGBT Chip N-CH 600V 28A 100000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 31A 100000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 31A 100000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 34A 100000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 28A 100000mW 3Pin(2+Tab) D2PAK Tube
Infineon
INFINEON IRG4BC30FD-SPBF IGBT Single Transistor, 31A, 1.8V, 100W, 600V, TO-263, 3Pins
Infineon
Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 23A 100000mW 3Pin(3+Tab) TO-220AB Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
