| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -28.0 A |
| Case/Package | TO-251-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 0.065 Ω |
| Polarity | P-Channel |
| Power Dissipation | 110 W |
| Part Family | IRFU5305 |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | -55.0 V |
| Continuous Drain Current (Ids) | -31.0 A |
| Rise Time | 66.0 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 17.09 mm |
| Size-Height | 6.73 mm |
| Lead Length | 9.65 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●P-Channel Power MOSFET over 8A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
11 Pages / 0.23 MByte
International Rectifier
4 Pages / 0.21 MByte
International Rectifier
MOSFET P-CH 55V 31A I-PAK
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.065Ω, Id=-31A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; I-Pak (TO-251AA); PD 110W
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