| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 45 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 45 W |
| Input Capacitance | 1100 pF |
| Rise Time | 21 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Thermal Resistance | 65 ℃/W |
| Reverse recovery time | 42 ns |
| Input Power (Max) | 45 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 45000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4IBC30UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes.
● Tighter parameter distribution
● Simplified assembly
● High efficiency and power density
● HEXFRED™ anti-parallel diode minimizes switching losses and EMI
● 4.8mm Creepage distance to heat sink
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