TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 100 mA |
Case/Package | SC-88-6 |
Polarity | NPN, PNP |
Power Dissipation | 0.385 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 100mA |
hFE Min | 80 @5mA, 10V |
hFE Max | 80 @5mA, 10V |
Input Power (Max) | 250 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 385 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Size-Height | 0.9 mm |
Look no further than ON Semiconductor"s npn and PNP MUN5333DW1T1G digital transistor, which can provide a solution to your digital signal processing needs. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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