TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 11.0 A |
Case/Package | TO-247-3 |
Polarity | N-Channel |
Power Dissipation | 60 W |
Part Family | IRG4PH20K |
Rise Time | 28 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Power (Max) | 60 W |
Fall Time | 400 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 60000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Height | 20.7 mm |
Operating Temperature | -55℃ ~ 150℃ |
International Rectifier
9 Pages / 0.15 MByte
International Rectifier
20 Pages / 2.6 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5A)
Infineon
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-247AC
International Rectifier
IGBT 1200V 11A 60W TO247AC
International Rectifier
IGBT 1200V 11A 60W TO247AC
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