TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 20.0 A |
Case/Package | TO-247-3 |
Polarity | N-Channel |
Power Dissipation | 100 W |
Part Family | IRG4PH30KD |
Rise Time | 79.0 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 50 ns |
Input Power (Max) | 100 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
IGBT 1.2V 20A 100W Through Hole TO-247AC
International Rectifier
11 Pages / 0.21 MByte
International Rectifier
11 Pages / 0.46 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.1V, @Vge=15V, Ic=10A)
Infineon
Trans IGBT Chip N-CH 1200V 20A 100000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 20A 100000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
INTERNATIONAL RECTIFIER IRG4PH30KPBF IGBT Single Transistor, 20A, 3.1V, 100W, 1.2kV, TO-247AC, 3Pins
International Rectifier
Trans IGBT Chip N-CH 1.2kV 20A 3Pin(3+Tab) TO-247AC
International Rectifier
IGBT 1200V 20A 100W TO247AC
International Rectifier
IGBT 1200V 20A 100W TO247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 20A 3Pin(3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 20A 3Pin (3+Tab) TO-247AC
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.1V, @Vge=15V, Ic=10A)
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