| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 20.0 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 100 W |
| Part Family | IRG4PH30KD |
| Rise Time | 84.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 50 ns |
| Input Power (Max) | 100 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
International Rectifier
11 Pages / 0.21 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.1V, @Vge=15V, Ic=10A)
Infineon
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International Rectifier
INTERNATIONAL RECTIFIER IRG4PH30KPBF IGBT Single Transistor, 20A, 3.1V, 100W, 1.2kV, TO-247AC, 3Pins
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Trans IGBT Chip N-CH 1.2kV 20A 3Pin(3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 20A 3Pin (3+Tab) TO-247AC
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.1V, @Vge=15V, Ic=10A)
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