| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Dissipation | 38000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 28 ns |
| Input Power (Max) | 38 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 38000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 8.5A 38W Surface Mount D-Pak
Infineon
11 Pages / 0.29 MByte
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270 Pages / 11.59 MByte
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73 Pages / 2.93 MByte
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2 Pages / 0.17 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5A)
Infineon
Trans IGBT Chip N-CH 600V 14A 38000mW 3Pin(2+Tab) DPAK Tube
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Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK Tube
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Trans IGBT Chip N-CH 600V 9A 38000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 14A 38000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 14A 38000mW 3Pin(2+Tab) DPAK Tube
Infineon
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 14A 3Pin(2+Tab) DPAK T/R
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