IRGBC30 Datasheet PDF - International Rectifier

Description

●Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high current applications.

●Features

●• Switching-loss rating includes all "tail" losses

●•  Optimized for medium operating frequency ( 1 to 10kHz)