| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 750 W |
| Number of Positions | 3 Position |
| Power Dissipation | 750 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 130 ns |
| Input Power (Max) | 750 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 750 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.1 mm |
| Size-Width | 5.5 mm |
| Size-Height | 20.8 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRGPS46160DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features high efficiency in a wide range of applications and switching, improved reliability due to rugged hard switching performance and high power capability.
● Low VCE(ON) and switching losses
● Square RBSOA
● Positive VCE (ON) temperature coefficient
● Excellent current sharing in parallel operation
● Enables short-circuit protection scheme
● Environmentally-friendly
● 5µs Short-circuit SOA
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