| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0046 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 40.0 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 1850pF @25V(Vds) |
| Input Power (Max) | 70 W |
| Fall Time | 10.8 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 70W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.4 mm |
| Size-Height | 6.9 mm |
| Operating Temperature | 175℃ (TJ) |
The STU85N3LH5 is a 30V N-channel STripFET™ V Power MOSFET suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. The MOSFET utilizes the 5th generation of design rules of proprietary STripFET™ technology. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● RDS (ON) Qg industry benchmark
● Extremely low on-resistance RDS (on)
● High avalanche ruggedness
● Low gate drive power losses
ST Microelectronics
16 Pages / 0.79 MByte
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