TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-262-3 |
Power Rating | 200 W |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 9 mΩ |
Polarity | N-CH |
Power Dissipation | 200 W |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 140A |
Rise Time | 230 ns |
Input Capacitance (Ciss) | 5000pF @25V(Vds) |
Fall Time | 35 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.2 mm |
Size-Width | 4.5 mm |
Size-Height | 9.45 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 30V 140A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
Infineon
11 Pages / 0.38 MByte
Infineon
5 Pages / 0.08 MByte
Infineon
1 Pages / 0.12 MByte
International Rectifier
MOSFET N-CH 30V 140A TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.006Ω, Id=140A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.006Ω; ID 140A; TO-220AB; PD 200W; VGS +/-16V
International Rectifier
Trans MOSFET N-CH 30V 140A 3Pin(2+Tab) D2PAK Tube
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