| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 110 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.006 Ω |
| Polarity | N-CH |
| Power Dissipation | 110 W |
| Threshold Voltage | 2.25 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 105A |
| Rise Time | 38 ns |
| Input Capacitance (Ciss) | 2840pF @15V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRL8113PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters.
● Low gate charge
● Low RDS (ON) at 4.5V VGS
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