| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | DIP-4 |
| Power Dissipation | 1300 mW |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 250pF @25V(Vds) |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 1.3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Vishay Siliconix
9 Pages / 1.58 MByte
Vishay Siliconix
1 Pages / 0.12 MByte
Vishay Siliconix
MOSFET N-CH 100V 1A 4-DIP
International Rectifier
MOSFET N-CH 100V 1A 4-DIP
Vishay Semiconductor
MOSFET N-CH 100V 1A 4-DIP
VISHAY
HVMDIP-4 N-CH 100V 1A 540Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1A; HD-1; PD 1.3W; VGS +/-10V; VF 2.
Vishay Siliconix
MOSFET N-CH 100V 1A 4-DIP
Vishay Intertechnology
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1A; HD-1; PD 1.3W; VGS +/-10V; VF 2.
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