| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | QFN-8 |
| Power Rating | 3.6 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0037 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.6 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 20A |
| Rise Time | 48 ns |
| Input Capacitance (Ciss) | 5360pF @25V(Vds) |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.6W (Ta), 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRLH5036TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for secondary side synchronous rectification, boost converters and DC-to-DC brick applications. It is compatible with existing surface-mount techniques.
● Low RDS (ON) (<5.5mR at Vgs = 4.5V) results in low conduction losses
● Low thermal resistance to PCB (less than 2.7°C/W) enables better thermal dissipation
● 100% Rg tested for increased reliability
● Low profile (less than 0.9mm) results in increased power density
● Halogen-free
● Industrial qualification MSL-1 (increased reliability)
Infineon
9 Pages / 0.25 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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4 Pages / 0.23 MByte
International Rectifier
Trans MOSFET N-CH 60V 20A 8Pin PQFN EP T/R
International Rectifier
Trans MOSFET N-CH 60V 20A 8Pin PQFN EP T/R
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