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RQ3E150GNTB
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RQ3E150GNTB Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:MOSFETs
Case Package:HSMT-8
Description:HSMT N-CH 30V 15A
Documentation:RQ3E150GNTB Datasheet (13 Pages)
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RQ3E150GNTB Datasheet PDF (13 Pages)
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RQ3E150GNTB Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageHSMT-8
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.0047 Ω
PolarityN-Channel
Power Dissipation2 W
Threshold Voltage2.5 V
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)15A
Rise Time5.8 ns
Input Capacitance (Ciss)850pF @15V(Vds)
Fall Time7.8 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2W (Ta), 17.2W (Tc)
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RQ3E150GNTB Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature150℃ (TJ)
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RQ3E150GNTB Documents

RQ3E150GNTB Datasheet
ROHM Semiconductor
13 Pages / 2.41 MByte
RQ3E150GNTB Other Datasheet PDF
ROHM Semiconductor
12 Pages / 1.01 MByte

RQ3E150 Documents

RQ3E150GNTB Datasheet PDF
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HSMT N-CH 30V 15A
RQ3E150BNTB Datasheet PDF
ROHM Semiconductor
HSMT N-CH 30V 15A
RQ3E150MNTB1 Datasheet PDF
ROHM Semiconductor
HSMT N-CH 30V 15A
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