TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | TO-261-4 |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.2 Ω |
Polarity | N-Channel |
Power Dissipation | 2 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 2.70 A |
Rise Time | 110 ns |
Input Capacitance (Ciss) | 400pF @25V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 26 ns |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 2500 |
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
VISHAY
8 Pages / 0.15 MByte
VISHAY
9 Pages / 0.21 MByte
VISHAY
8 Pages / 0.58 MByte
International Rectifier
MOSFET N-CH 60V 2.7A SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4
International Rectifier
Trans MOSFET N-CH 55V 2.8A 4Pin(3+Tab) SOT-223 T/R
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.