| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.048 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.8 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 5A |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 380pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Single N-Channel 55 V 2.8 W 7 nC Hexfet Power Mosfet Surface Mount - SOT-223-3
Infineon
10 Pages / 0.25 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.32 MByte
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MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
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