| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 42 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 7.70 A |
| Rise Time | 64 ns |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Operating Temperature | -55℃ ~ 150℃ |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• Surface Mount (IRLR120/SiHLR120)
●• Straight Lead (IRLU120/SiHLU120)
●• Available in Tape and Reel
●• Logic-Level Gate Drive
●•RDS(on)Specified at VGS= 4 V and 5 V
●• Lead (Pb)-free Available
Vishay Semiconductor
8 Pages / 0.59 MByte
Vishay Semiconductor
11 Pages / 1.23 MByte
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