TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 80.0 V |
Current Rating | 30.0 A |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.028 Ω |
Polarity | N-Channel |
Power Dissipation | 120 W |
Part Family | IRLR2908 |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 80 V |
Breakdown Voltage (Drain to Source) | 80.0 V |
Continuous Drain Current (Ids) | 30.0 A |
Rise Time | 95.0 ns |
Input Capacitance (Ciss) | 1890pF @25V(Vds) |
Input Power (Max) | 120 W |
Operating Temperature (Max) | 175 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Description
●Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features
●Advanced Process Technology
●Ultra Low On-Resistance
●Dynamic dv/dt Rating
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Lead-Free
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Infineon
Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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