| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 13.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 0.235 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Part Family | IRFR13N20D |
| Input Capacitance | 830pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 13.0 A |
| Rise Time | 27.0 ns |
| Input Capacitance (Ciss) | 830pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET 13A to 19A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
11 Pages / 0.12 MByte
International Rectifier
1 Pages / 0.42 MByte
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.235Ω, Id=13A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.235Ω; ID 13A; D-Pak (TO-252AA); PD 110W
International Rectifier
Trans MOSFET N-CH 200V 13A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 200V 13A 3Pin(2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 200V 13A 3Pin(2+Tab) DPAK T/R
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