| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 65.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 12.5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 75 W |
| Part Family | IRLR7821 |
| Input Capacitance | 1030pF @15V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 65.0 A |
| Rise Time | 4.20 ns |
| Input Capacitance (Ciss) | 1030pF @15V(Vds) |
| Input Power (Max) | 75 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 6.73 mm |
| Size-Height | 2.26 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET 60A to 79A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
12 Pages / 0.31 MByte
International Rectifier
12 Pages / 0.31 MByte
International Rectifier
Trans MOSFET N-CH 30V 65A 3Pin (2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 30V 65A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
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