TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0075 Ω |
Polarity | N-Channel |
Power Dissipation | 75 W |
Threshold Voltage | 20 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 65A |
Rise Time | 4.2 ns |
Input Capacitance (Ciss) | 1030pF @15V(Vds) |
Fall Time | 3.2 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 75W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Low RDS(ON) at 4.5V VGS
● Fully Characterized Avalanche Voltage and Current
● Ultra-Low Gate Impedance
● Logic Level
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13 Pages / 0.31 MByte
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International Rectifier
Trans MOSFET N-CH 30V 65A 3Pin (2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 30V 65A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
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