| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 42.0 A |
| Case/Package | TO-251 |
| Drain to Source Resistance (on) (Rds) | 27 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Part Family | IRLU2905 |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 42.0 A |
| Rise Time | 100 ns |
| Input Capacitance (Ciss) | 1700pF @25V(Vds) |
| Input Power (Max) | 110 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
VDSS= 55V
●RDS(on)= 0.027Ω
●ID= 42A
●Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●Logic-Level Gate Drive
●Ultra Low On-Resistance
●Surface Mount (IRLR2905)
●Straight Lead (IRLU2905)
●Advanced Process Technology
●Fast Switching
●Fully Avalanche Rated
●Lead-Free
International Rectifier
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International Rectifier
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