| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Rating | 110 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.011 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 60A |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 1570pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 33 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 7.49 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLU2905ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Logic level
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
11 Pages / 0.32 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
9 Pages / 0.38 MByte
Infineon
1 Pages / 0.15 MByte
International Rectifier
MOSFET N-CH 55V 42A I-PAK
International Rectifier
Trans MOSFET N-CH 55V 60A 3Pin(3+Tab) IPAK Tube
International Rectifier
Single N- Channel 55V 110W 48NC Hexfet Power Mosfet Through Hole - I-Pak
International Rectifier
Trans MOSFET N-CH 55V 42A 3Pin(3+Tab) IPAK
International Rectifier
MOSFET N-CH 55V 42A I-PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
