TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-251-3 |
Drain to Source Resistance (on) (Rds) | 0.0039 Ω |
Polarity | N-CH |
Power Dissipation | 140 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 130A |
Rise Time | 140 ns |
Input Capacitance (Ciss) | 3810pF @25V(Vds) |
Input Power (Max) | 140 W |
Fall Time | 50 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Material | Silicon |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 40V 42A (Tc) 140W (Tc) Through Hole I-PAK
Infineon
11 Pages / 0.3 MByte
Infineon
5 Pages / 0.08 MByte
Infineon
4 Pages / 0.19 MByte
International Rectifier
Trans MOSFET N-CH 40V 130A 3Pin(3+Tab) IPAK
International Rectifier
MOSFET N-CH 40V 42A I-PAK
Infineon
Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3
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