| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Rating | 143 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0054 Ω |
| Polarity | N-CH |
| Power Dissipation | 143 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 99A |
| Rise Time | 216 ns |
| Input Capacitance (Ciss) | 3779pF @50V(Vds) |
| Fall Time | 96 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 143W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 7.49 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Logic Level
Infineon
10 Pages / 0.37 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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60V Single N-Channel HEXFET Power MOSFET in a I-Pak package
International Rectifier
N CHANNEL MOSFET, 60V, 99A, IPAK TranN CHANNEL MOSFET, 60V, 99A, IPAK
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