| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 10.0V (min) |
| Case/Package | SOIC-8 |
| Power Rating | 625 mW |
| Rise/Fall Time | 15 ns |
| Number of Outputs | 1 Output |
| Output Voltage | 600 V |
| Output Current | 4 A |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 1250 mW |
| Fall Time (Max) | 40 ns |
| Fall Time (Max) | 40 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1250 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 125℃ |
The IRS21850SPBF is a high voltage high speed power MOSFET and IGBT single High-side Gate Driver IC with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The floating logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic and can be operated up to 600V above the ground. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration, which operates up to 600V.
● Under-voltage lockout for VBS and VCC
● Tolerant to negative transient voltage
● Matched propagation delays for all channels
● 3.3 and 5V Input logic compatible
●ESD sensitive device, take proper precaution while handling the device.
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Buffer/Inverter Based Peripheral Driver, 4A, CMOS, PDSO16, ROHS COMPLIANT, MS-012AA, SOIC-8
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