| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SMD-3 |
| Polarity | PNP |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 175 V |
| Continuous Collector Current | 1A |
| hFE Min | 100 @50mA, 10V |
| Input Power (Max) | 1.5 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 3.25 mm |
| Size-Width | 2.74 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Microsemi has the solution to your circuit"s high-voltage requirements with their PNP 2N3637UB general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
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