IS42S16160G-7BLI Datasheet PDF - Integrated Silicon Solution(ISSI)

The IS42S16160G-7BLI is a 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as 4M x16x4 banks, 54-pin TSOPII and 54-ball BGA. The 256Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddq memory systems containing 268,435,456 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 67,108,864-bit bank is organized as 8,192 rows by 512 columns by 16 bits or 8,192 rows by 1,024 columns by 8 bits. The 256Mb SDRAM includes an AUTO REFRESH MODE and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.

● 143MHz Clock frequency

● 7ns Speed

● Fully synchronous, all signals referenced to a positive clock edge

● Internal bank for hiding row access/precharge

● 3.3 ±0.3V Single power supply

● LVTTL interface

● Programmable burst length - 1, 2, 4, 8, full page

● Sequential/Interleave programmable burst sequence

● Auto refresh (CBR)

● Self refresh

● 8K Refresh cycles every 16ms (A2 grade) or 64ms (commercial, industrial, A1 grade)

● Random column address every clock cycle

● Programmable CAS latency - 2, 3 clocks

● Burst read/write and burst read/single write operations capability

● Burst termination by burst stop and precharge command