| TYPE | DESCRIPTION |
|---|
| Number of Pins | 90 Pin |
| Case/Package | BGA |
| Number of Bits | 32 Bit |
| Access Time(Max) | 5.4ns, 6.5ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Integrated Silicon Solution(ISSI)
60 Pages / 0.83 MByte
Integrated Silicon Solution(ISSI)
60 Pages / 1 MByte
Integrated Silicon Solution(ISSI)
128M, 3.3V, SDRAM, 4Mx32, 143MHz, 86Pin TSOP II (400 mil) RoHS
Integrated Silicon Solution(ISSI)
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86Pin TSOP-II
Integrated Silicon Solution(ISSI)
128M, 3.3V, SDRAM, 4Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS, IT
Integrated Silicon Solution(ISSI)
128M, 3.3V, SDRAM, 4Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS
Integrated Silicon Solution(ISSI)
128M, 3.3V, SDRAM, 4Mx32, 143MHz, 86Pin TSOP II (400 mil) RoHS, IT, T&R
Integrated Silicon Solution(ISSI)
128M, 3.3V, SDRAM, 4Mx32, 143MHz, 86Pin TSOP II (400 mil) RoHS, T&R
Integrated Silicon Solution(ISSI)
128M, 3.3V, SDRAM, 4Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS, T&R
Integrated Silicon Solution(ISSI)
128M, 3.3V, SDRAM, 4Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
Integrated Silicon Solution(ISSI)
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13MM, 0.8MM PITCH, MO-207, TWBGA-90
Integrated Silicon Solution(ISSI)
DRAM 128M, 3.3V, SDRAM, 4Mx32, 143MHz, 90 ball BGA (8mmx13mm)
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