| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 48 Pin |
| Case/Package | BGA-48 |
| Number of Bits | 16 Bit |
| Access Time | 10 ns |
| Access Time(Max) | 10 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 2.4V ~ 3.6V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -40℃ ~ 85℃ (TA) |
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-miniBGA (9x11)
Integrated Silicon Solution(ISSI)
20 Pages / 0.19 MByte
Integrated Silicon Solution(ISSI)
2 Pages / 0.04 MByte
Integrated Silicon Solution(ISSI)
20 Pages / 0.61 MByte
Integrated Silicon Solution(ISSI)
INTEGRATED SILICON SOLUTION (ISSI) IS61WV51216BLL-10TLI SRAM, 8Mbit, 512K x 16Bit, 2.4V to 3.6V, TSOP-II, 44Pins, 10ns
Integrated Silicon Solution(ISSI)
The ISSI IS61WV51216BLL is a high-speed, 8M-bit static RAMs organized as 512K words by 16Bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The device is packaged in the JEDEC standard 44Pin TSOP Type II and 48Pin Mini BGA (9mm x 11mm).
Integrated Silicon Solution(ISSI)
8Mb,High-Speed,Async,512K X 16,8ns/3.3V,or 10ns/2.4V-3.6V,44Pin TSOP II, Leadfree
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 10ns 48Pin Mini-BGA T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 10ns 48Pin TFBGA
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