| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 16 Pin |
| Case/Package | SOIC-16 |
| Rise/Fall Time | 20 ns |
| Number of Outputs | 1 Output |
| Number of Channels | 1 Channel |
| Power Dissipation | 700 mW |
| Isolation Voltage | 5700 Vrms |
| Fall Time (Max) | 20 ns |
| Fall Time (Max) | 20 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -40℃ ~ 125℃ |
Correctly change the biasing voltage to a high power transistor by using this ISO5851DWR power driver by Texas Instruments. This device has a maximum propagation delay time of 76(typ) ns and a maximum power dissipation of 700 mW. Its maximum power dissipation is 700 mW. This device has a minimum operating supply voltage of 3 V and a maximum of 5.5 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
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