| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 52.0 V |
| Current Rating | 2.60 A |
| Case/Package | TO-261-4 |
| Drain to Source Resistance (on) (Rds) | 0.125 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.69 W |
| Threshold Voltage | 1.75 V |
| Drain to Source Voltage (Vds) | 59 V |
| Breakdown Voltage (Drain to Source) | 52.0 V |
| Breakdown Voltage (Gate to Source) | ±15.0 V |
| Continuous Drain Current (Ids) | 2.60 A |
| Input Capacitance (Ciss) | 250pF @35V(Vds) |
| Input Power (Max) | 1.69 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.69W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the NIF9N05CLT1G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 1690 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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