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IXA27IF1200HJ
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IXA27IF1200HJ Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:ISOPLUS-247
Description:IXYS SEMICONDUCTOR IXA27IF1200HJ IGBT Single Transistor, 43A, 2.1V, 150W, 1.2kV, TO-247AD, 3Pins
Documentation:IXA27IF1200HJ Datasheet (7 Pages)
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IXA27IF1200HJ Datasheet PDF (7 Pages)
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IXA27IF1200HJ Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageISOPLUS-247
Number of Positions3 Position
Power Dissipation150 W
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)150 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)150 W
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IXA27IF1200HJ Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length16.13 mm
Size-Width5.21 mm
Size-Height21.34 mm
Operating Temperature-40℃ ~ 150℃ (TJ)
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IXA27IF1200HJ Documents

IXA27IF1200HJ Datasheet
IXYS Semiconductor
7 Pages / 0.12 MByte
IXA27IF1200HJ Other Datasheet PDF
IXYS Semiconductor
16 Pages / 0.13 MByte

IXA27IF1200 Documents

IXA27IF1200HJ Datasheet PDF
IXYS Semiconductor
IXYS SEMICONDUCTOR IXA27IF1200HJ IGBT Single Transistor, 43A, 2.1V, 150W, 1.2kV, TO-247AD, 3Pins
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