| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Power Dissipation | 290 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 290 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 290 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.34 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IXA55I1200HJ is a XPT IGBT features high-current handling capabilities, high-speed switching abilities, low total energy losses and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. In addition to being avalanche rated, this device has square reverse bias safe operating areas (RBSOA) up to the breakdown voltage of 1200V, a necessary ruggedness in Snubberless hard-switching applications. The new 1200V XPT™ device with co-packed anti-parallel Sonic-FRD™ or HiPerFRED™ diode is optimized to reduce turn-OFF losses and suppress ringing oscillations, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process.
● Easy paralleling due to the positive temperature coefficient of the ON-state voltage
● Thin wafer technology combined with the XPT design results in a competitive low VCE (saturation)
● Very low gate charge
● Low EMI
● Square RBSOA at 3x IC
● Short-circuit rated for 10µs
IXYS Semiconductor
16 Pages / 0.13 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84A, 2.1V, 290W, 1.2kV, TO-247AD, 3Pins
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