| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 75.0 A |
| Case/Package | TO-263 |
| Polarity | N-Channel |
| Part Family | IRF3205ZS |
| Input Capacitance | 3.45 nF |
| Gate Charge | 110 nC |
| Drain to Source Voltage (Vds) | 55.0 V |
| Continuous Drain Current (Ids) | 110 A |
| Rise Time | 95.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
VDSS= 55V
●RDS(on)= 6.5mΩ
●ID= 75A
●Description
●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features
●Advanced Process Technology
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
International Rectifier
12 Pages / 0.29 MByte
International Rectifier
12 Pages / 0.29 MByte
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin (3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin(2+Tab) D2PAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
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