| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Power Dissipation | 660000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 5.5nF @25V |
| Input Power (Max) | 660 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 660000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Don"t be afraid to step up the amps in your device when using this IXDN75N120 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 660000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
IXYS Semiconductor
4 Pages / 0.07 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 150A 660000mW 4Pin SOT-227B
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