| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 1040 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 12000pF @25V(Vds) |
| Input Power (Max) | 1040 W |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1040W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the IXFX44N80P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 1200000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology.
IXYS Semiconductor
4 Pages / 0.09 MByte
IXYS Semiconductor
6 Pages / 0.22 MByte
IXYS Semiconductor
Trans MOSFET N-CH 800V 44A 3Pin(3+Tab) PLUS 247
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