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IXEN60N120
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IXEN60N120 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:SOT-227-4
Description:Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B
Documentation:IXEN60N120 Datasheet (11 Pages)Package Outline Dimension on9 Page10 Page
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IXEN60N120 Datasheet PDF (11 Pages)
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IXEN60N120 Specifications

TYPEDESCRIPTION
Mounting StyleChassis
Number of Pins4 Pin
Case/PackageSOT-227-4
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)3.8nF @25V
Input Power (Max)445 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
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IXEN60N120 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
Operating Temperature-40℃ ~ 150℃ (TJ)
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IXEN60N120 Documents

IXEN60N120 Datasheet
IXYS Semiconductor
11 Pages / 0.67 MByte
IXEN60N120 Other Datasheet PDF
IXYS Semiconductor
7 Pages / 0.19 MByte

IXEN60 Documents

IXEN60N120D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B
IXEN60N120 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B
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