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IXSN80N60AU1
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IXSN80N60AU1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:SOT-227-4
Description:IGBT 100A 600V SOT-227B
Documentation:IXSN80N60AU1 Datasheet (4 Pages)
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IXSN80N60AU1 Datasheet PDF (4 Pages)
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IXSN80N60AU1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Case/PackageSOT-227-4
Breakdown Voltage (Collector to Emitter)600 V
Input Capacitance (Cies)8.5nF @25V
Input Power (Max)500 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
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IXSN80N60AU1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
Size-Length38.3 mm
Size-Width25.07 mm
Size-Height9.6 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXSN80N60AU1 Documents

IXSN80N60AU1 Datasheet
IXYS Semiconductor
4 Pages / 0.08 MByte
IXSN80N60AU1 Other Datasheet PDF
IXYS Semiconductor
4 Pages / 0.09 MByte

IXSN80N60 Documents

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IXYS Semiconductor
Trans IGBT Chip N-CH 600V 160A 420000mW 4Pin SOT-227B
IXSN80N60AU1 Datasheet PDF
IXYS Semiconductor
IGBT 100A 600V SOT-227B
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