| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0145 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.89 kW |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 300 V |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 16200pF @25V(Vds) |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1890W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 20.29 mm |
| Size-Width | 5.31 mm |
| Size-Height | 26.59 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFB210N30P3 is a N-channel enhancement mode Power MOSFET features dynamic dv/dt rating, fast intrinsic rectifier and low drain-to-tab capacitance.
● Fast intrinsic rectifier
● Dynamic dv/dt rating
● Low drain to tab capacitance
● Easy to mount
● Space savings
IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
MOSFET Transistor, N Channel, 210A, 300V, 0.0145Ω, 10V, 5V
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