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IXFB52N90P
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IXFB52N90P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:High Voltage MOS
Case Package:TO-264-3
Description:PLUS N-CH 900V 52A
Documentation:IXFB52N90P Datasheet (5 Pages)Package Outline Dimension on2 Page4 Page
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IXFB52N90P Datasheet PDF (5 Pages)
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IXFB52N90P Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-264-3
Number of Channels1 Channel
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)160 mΩ
PolarityN-Channel
Power Dissipation1.25 kW
Threshold Voltage3.5 V
Drain to Source Voltage (Vds)900 V
Breakdown Voltage (Drain to Source)900 V
Continuous Drain Current (Ids)52A
Rise Time80 ns
Input Capacitance (Ciss)19000pF @25V(Vds)
Input Power (Max)1250 W
Fall Time42 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)1250W (Tc)
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IXFB52N90P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length20.29 mm
Size-Width5.31 mm
Size-Height26.59 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFB52N90P Documents

IXFB52N90P Datasheet
IXYS Semiconductor
5 Pages / 0.11 MByte
IXFB52N90P Other Datasheet PDF
IXYS Semiconductor
16 Pages / 0.13 MByte

IXFB52N90 Documents

IXFB52N90P Datasheet PDF
IXYS Semiconductor
PLUS N-CH 900V 52A
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