| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Polarity | N-Channel |
| Power Dissipation | 480 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 110 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 3550pF @25V(Vds) |
| Input Power (Max) | 480 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 480W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXFH110N10P is a PolarHT™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
● Avalanche rating
● International standard packages
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
1 Pages / 0.37 MByte
IXYS Semiconductor
Trans MOSFET N-CH 100V 110A 3Pin(3+Tab) TO-247
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