| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.35 Ω |
| Polarity | N-Channel |
| Power Dissipation | 543 W |
| Threshold Voltage | 6.5 V |
| Drain to Source Voltage (Vds) | 1.2 kV |
| Continuous Drain Current (Ids) | 12A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 5400pF @25V(Vds) |
| Fall Time | 34 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 543W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
●VDSS = 1200V
●ID25 = 12A
●RDS(on) ≤ 1.35Ω
●trr ≤ 300ns
●Features
●International standard packages
●Fast recovery diode
●Unclamped Inductive Switching (UIS) rated
●Low package inductance
● - easy to drive and to protect
●Advantages
●Easy to mount
●Space savings
●High power density
●Applications:
●High Voltage Switched-mode and resonant-mode power supplies
●High Voltage Pulse Power Applications
●High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators
●High Voltage DC-DC converters
●High Voltage DC-AC inverters
IXYS Semiconductor
4 Pages / 0.17 MByte
IXYS Semiconductor
4 Pages / 0.17 MByte
IXYS Semiconductor
1 Pages / 0.08 MByte
Littelfuse
Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247
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