TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-262-3 |
Polarity | N-CH |
Power Dissipation | 300 W |
Drain to Source Voltage (Vds) | 75 V |
Continuous Drain Current (Ids) | 120A |
Rise Time | 165 ns |
Input Capacitance (Ciss) | 11400pF @25V(Vds) |
Input Power (Max) | 300 W |
Fall Time | 62.6 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 10.75 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
If you need to either amplify or switch between signals in your design, then STMicroelectronics" STI260N6F6 power MOSFET is for you. Its maximum power dissipation is 300000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
16 Pages / 0.5 MByte
ST Microelectronics
14 Pages / 0.73 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.