| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.9 Ω |
| Polarity | N-Channel |
| Power Dissipation | 380 W |
| Threshold Voltage | 3.5 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 6A |
| Rise Time | 34 ns |
| Input Capacitance (Ciss) | 3080pF @25V(Vds) |
| Fall Time | 68 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 380W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH12N90P is a HiPerFET™ N-channel enhancement-mode Polar™ Power MOSFET features avalanche rated and fast intrinsic diode.
● Low package inductance
● International standard package
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
11 Pages / 1.05 MByte
IXYS Semiconductor
Discrete MOSFETs: HiPerFET Power MOSFETS
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