| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 660 W |
| Threshold Voltage | 6.5 V |
| Drain to Source Voltage (Vds) | 1000 V |
| Continuous Drain Current (Ids) | 20A |
| Rise Time | 37 ns |
| Input Capacitance (Ciss) | 7300pF @25V(Vds) |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 660W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 5.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the IXFH20N100P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
6 Pages / 0.22 MByte
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