| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 26.0 A |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 26.0 A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 3900pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Weight | 6.00 g |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH26N50Q is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density.
● Avalanche rating
● High dV/dt rating
● IXYS advanced low Qg process
● International standard packages
● Fast switching
● Easy to mount
● Space saving
● UL94V-0 Flammability rating
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 26A 3Pin(3+Tab) TO-247AD
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